☑ Transistor Mosfet F1010e

To use the less than or greater than function please select a value first. It has three pins namely gate drain and source.

10pcs Mosfet Transistor Ir To 220 Irf1010e Irf1010epbf

5pcs Irf1405 Power Mosfet Transistor To 220

Details About 10pcs Mosfet Transistor Ir To 220 Irf1010e Irf1010epbf F1010e

60 v maximum gate source voltage vgs.

Transistor mosfet f1010e. N channel maximum power dissipation pd. Typical transfer characteristics 1 10 100 1000 01 1 10 100 20us pulse width t 25j 0c top bottom vgs 15v 10v 80v 70v 60v 55v 50v 45v v drain to source voltage v i drain to source current a ds d 45v 10. Mosfet type of control channel.

F1010e data sheet alldatasheet free databook. It also has low turn on resistance. Typical output characteristics fig 2.

12000 ohm continuous drain current. 81 a maximum junction temperature. 20 v drain source on state resistance max.

Datasheet search engine for electronic components and semiconductors. 10 v maximum drain current id. F1010e datasheet f1010e pdf f1010e data sheet f1010e manual f1010e pdf f1010e datenblatt electronics f1010e alldatasheet free datasheet datasheets data.

170 w maximum drain source voltage vds. 866 nc power dissipation. Mosfet mosft 60v 81a 12mohm 866nc mosfet mosft 60v 83a 12mohm 866nc please modify your search so that it will return results.

Typical output characteristics fig 3. Irf1010e is an n channel enhancement mosfet designed for high speed switching applications. 81 a total gate charge.

Bridgold 5pcs irfp260npbf irfp260n irfp260 n channel mosfet transistor 50 a 200 v3 pin 1089 10a dual channel bi directional dc motor driver. F1010e datasheet f1010e pdf. Like any other mosfet the irf1010e is voltage controlled device and mosfet state is decided by gate voltage.

F1010e datasheet cross reference circuit and application notes in pdf format. 60 v gate to source voltage max. Irf1010e type of transistor.

Mosfet vs transistor testing difference subscribe share comment like. Please modify your search so that it will return results. N channel drain to source breakdown voltage.